Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized 重點介紹了目前開管ga擴散工藝的發展現狀和開管擴鐮晶體管負阻效應的研究現狀。
The experimental instruments , apparatus and the means to prepare all the samples are introduced in the first section . in section 2 , the experimental system including the oxidization system and diffusion system , are introduced therein . in section 3 , the samples preparation including the pre - deposition , redistribution and re - oxidization , the samples of b doping , and the fabrication of ga - diffusion transistor , b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein , and the as - prepared samples are analyzed by sims , srp and four point probe 首先介紹了制備各種樣品所用的實驗儀器、設備與方法;第二節中介紹了實驗系統,包括氧化系統、擴散系統,第三節介紹了樣品的制備,包括ga的預沉積、再分布、二次氧化樣品,擴硼樣品,以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程;實驗所得樣品,借助二次離子質譜( sims ) 、擴展電阻( srp ) 、四探針薄層電阻等先進的測試分析方法進行分析。
百科解釋
A diffusion transistor is any transistor formed by diffusing dopants into a semiconductor substrate. Diffusion transistors include some types of both bipolar junction transistors and field-effect transistors.